CSD23202W10T
MOSFET P-CH 12V 2.2A 4DSBGA
Whakahaerehia te kore utu / RoHS
Tono Utu & Te Arahi Taima
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Tonoa Uiui
Hua Whakapapa
- Vgs (th) (Max) @ Id
- 900mV @ 250µA
- Vgs (Max)
- -6V
- Hangarau
- MOSFET (Metal Oxide)
- Pūrere Pūrere Whakarato
- 4-DSBGA (1x1)
- Raupapa
- NexFET™
- Runa I (Max) @ Id, Vgs
- 53 mOhm @ 500mA, 4.5V
- Whakaaetanga Mana (Max)
- 1W (Ta)
- Packaging
- Cut Tape (CT)
- Paa / Case
- 4-UFBGA, DSBGA
- Ētahi Ingoa
- 296-38338-1
- Tae Mahi
- -55°C ~ 150°C (TJ)
- Momo Tae
- Surface Mount
- Taumata Whakaaro Moe (MSL)
- 1 (Unlimited)
- Te Tae Kaituku Taeke
- 35 Weeks
- Whakahaere Toko Whakahaere / RoHS Tūnga
- Lead free / RoHS Compliant
- Whakauru Whakauru (Ciss) (Max) @ Vds
- 512pF @ 6V
- Puta Whakatau (Qg) (Max) @ Vgs
- 3.8nC @ 4.5V
- Momo FET
- P-Channel
- FET Pānga
- -
- Kohikohi Whakaeke (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Tuku ki te Pūtake Pūtake (Vdss)
- 12V
- Whakaahuatanga Taipitopito
- P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
- I teie nei - Ngaa Toa (Id) @ 25 ° C
- 2.2A (Ta)
Ngā Hua
- CSD23202W10T
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- Pukaiti pepa CSD23202W10T pdf
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